BUW70 transistor equivalent, silicon npn power transistor.
*Designed for use in clocked voltage converters.
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collect.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min.)
*Low Collector Saturation Voltage-
: VCE(sat)= 0.8V(Max.) @IC= 4A
*High Speed Switching
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
.
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